ترانزستورات - ترانزستورات تأثير المجال (FET)، ترانزستورات موسفت (MOSFET) - أحادية

الصورة: رقم جزء الشركة المصنعة حالة المخزون السعر الكمية ورقة البيانات Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
LSIC1MO120E0120

LSIC1MO120E0120

SICFET N-CH 1200V 27A TO247-3

Littelfuse Inc.
2,152 -

RFQ

LSIC1MO120E0120

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 27A (Tc) 20V 150mOhm @ 14A, 20V 4V @ 7mA 80 nC @ 20 V +22V, -6V 1125 pF @ 800 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
LSIC1MO170E0750

LSIC1MO170E0750

SICFET N-CH 1700V 750OHM TO247-3

Littelfuse Inc.
2,511 -

RFQ

LSIC1MO170E0750

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 6.2A (Tc) 20V 1Ohm @ 2A, 20V 4V @ 1mA 13 nC @ 20 V +22V, -6V 200 pF @ 1000 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
LSIC1MO170T0750

LSIC1MO170T0750

SICFET N-CH 1700V 6.4A TO263-7L

Littelfuse Inc.
3,381 -

RFQ

LSIC1MO170T0750

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 5A (Tc) - - - - - - - - 175°C (TJ) Surface Mount
LSIC1MO120G0040

LSIC1MO120G0040

MOSFET SIC 1200V 50A TO247-4L

Littelfuse Inc.
2,939 -

RFQ

LSIC1MO120G0040

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 70A (Tc) 20V 50mOhm @ 40A, 20V 4V @ 20mA 175 nC @ 20 V +22V, -6V 317 pF @ 800 V - 357W (Tc) -55°C ~ 175°C (TJ) Through Hole
LSIC1MO120G0025

LSIC1MO120G0025

MOSFET SIC 1200V 70A TO247-4L

Littelfuse Inc.
3,176 -

RFQ

LSIC1MO120G0025

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 20V 32mOhm @ 50A, 20V 4V @ 30mA 265 nC @ 20 V +22V, -6V 495 pF @ 800 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
LSIC1MO120E0080

LSIC1MO120E0080

SICFET N-CH 1200V 39A TO247-3

Littelfuse Inc.
791 -

RFQ

LSIC1MO120E0080

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 39A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 95 nC @ 20 V +22V, -6V 1825 pF @ 800 V - 179W (Tc) -55°C ~ 150°C Through Hole
SYC0102BLT1G

SYC0102BLT1G

SCR 0.25A GATE SCR

Littelfuse Inc.
2,770 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
LSIC1MO120E0160

LSIC1MO120E0160

SICFET N-CH 1200V 22A TO247-3

Littelfuse Inc.
1,154 -

RFQ

LSIC1MO120E0160

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 20V 200mOhm @ 10A, 20V 4V @ 5mA 57 nC @ 20 V +22V, -6V 870 pF @ 800 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
LSIC1MO170E1000

LSIC1MO170E1000

SICFET N-CH 1700V 5A TO247-3L

Littelfuse Inc.
2,587 -

RFQ

LSIC1MO170E1000

ورقة البيانات

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 1700 V 5A (Tc) 15V, 20V 1Ohm @ 2A, 20V 4V @ 1mA 15 nC @ 20 V +22V, -6V 200 pF @ 1000 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
LSIC1MO120G0160

LSIC1MO120G0160

MOSFET SIC 1200V 14A TO247-4L

Littelfuse Inc.
2,989 -

RFQ

LSIC1MO120G0160

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 20V 200mOhm @ 10A, 20V 4V @ 5mA 50 nC @ 20 V +22V, -6V 890 pF @ 800 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
LSIC1MO120G0120

LSIC1MO120G0120

MOSFET SIC 1200V 18A TO247-4L

Littelfuse Inc.
3,288 -

RFQ

LSIC1MO120G0120

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 27A (Tc) 20V 150mOhm @ 14A, 20V 4V @ 7mA 63 nC @ 20 V +22V, -6V 113 pF @ 800 V - 156W (Tc) -55°C ~ 175°C (TJ) Through Hole
LSIC1MO120G0080

LSIC1MO120G0080

MOSFET SIC 1200V 25A TO247-4L

Littelfuse Inc.
2,363 -

RFQ

LSIC1MO120G0080

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 39A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 92 nC @ 20 V +22V, -6V 170 pF @ 800 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ متوسط RFQ اليومي
20,000.000
20,000.000 وحدة المنتج القياسية
1800+
1800+ المصنعين حول العالم
15,000+
15,000+ المخزن المتاح
阿拉伯语

الصفحة الرئيسية

阿拉伯语

المنتج

阿拉伯语

الهاتف

阿拉伯语

المستخدم