المزيد من فئات المنتجات

الثنائيات - مقومات - المصفوفات

رقم جزء الشركة المصنعة	حالة المخزون	السعر	الكمية	ورقة البيانات	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
G3S06540B SIC SCHOTTKY DIODE 650V 40A 3-PI Global Power Technology-GPT	2,423	-	RFQ	ورقة البيانات	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	60A (DC)	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G5S12030BM SIC SCHOTTKY DIODE 1200V 30A 3-P Global Power Technology-GPT	3,075	-	RFQ	ورقة البيانات	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	55A (DC)	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S17010B SIC SCHOTTKY DIODE 1700V 10A 3-P Global Power Technology-GPT	2,967	-	RFQ	ورقة البيانات	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1700 V	29.5A (DC)	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	50 µA @ 1700 V	-55°C ~ 175°C	Through Hole
G3S06560B SIC SCHOTTKY DIODE 650V 4A 3-PIN Global Power Technology-GPT	2,544	-	RFQ	ورقة البيانات	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	95A (DC)	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G3S12030B SIC SCHOTTKY DIODE 1200V 30A 3-P Global Power Technology-GPT	2,618	-	RFQ	ورقة البيانات	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	42A (DC)	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G5S12040PP SIC SCHOTTKY DIODE 1200V 40A 2-P Global Power Technology-GPT	3,902	-	RFQ	ورقة البيانات	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Anode	Silicon Carbide Schottky	1200 V	115A (DC)	1.7 V @ 40 A	No Recovery Time > 500mA (Io)	100 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G5S12040BM SIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology-GPT	2,687	-	RFQ	ورقة البيانات	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	62A (DC)	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S12040B SIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology-GPT	3,726	-	RFQ	ورقة البيانات	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	64.5A (DC)	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G5S12040B SIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology-GPT	2,690	-	RFQ	ورقة البيانات	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	62A (DC)	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S17020B SIC SCHOTTKY DIODE 1700V 20A 3-P Global Power Technology-GPT	3,350	-	RFQ	ورقة البيانات	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1700 V	24A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	100 µA @ 1700 V	-55°C ~ 175°C	Through Hole
G4S12040BM SIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology-GPT	3,476	-	RFQ	ورقة البيانات	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	64.5A (DC)	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	30 µA @ 1200 V	-55°C ~ 175°C	Through Hole