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| الصورة: | رقم جزء الشركة المصنعة | حالة المخزون | السعر | الكمية | ورقة البيانات | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP3D010A170BSIC SCHOTTKY DIODE 1700V TO247-2 SemiQ |
2,557 | - |
RFQ |
ورقة البيانات |
Tube | RoHS | - | - | Active | - | - | - | - | 1700 V | 10A | - | - | |
|
GP3D008A065DSIC SCHOTTKY DIODE 650V TO263-2L SemiQ |
800 | - |
RFQ |
ورقة البيانات |
Tape & Reel (TR),Cut Tape (CT) | RoHS | - | - | Active | - | - | - | - | 650 V | 8A | - | - | |
|
|
GP3D020A120BSIC SCHOTTKY DIODE 1200V TO247-2 SemiQ |
1,156 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1179pF @ 1V, 1MHz | 0 ns | 40 µA @ 1200 V | 1200 V | 20A | -55°C ~ 175°C | 1.65 V @ 20 A |
|
|
GP3D030A120BSIC SCHOTTKY DIODE 1200V TO247-2 SemiQ |
155 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1762pF @ 1V, 1MHz | 0 ns | 60 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 1.7 V @ 30 A |
|
GP3D008A065ASIC SCHOTTKY DIODE 650V TO220 SemiQ |
868 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 336pF @ 1V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 8A | -55°C ~ 175°C | 1.6 V @ 8 A |
|
GP3D040A065USIC SCHOTTKY DIODE 650V TO247-3 SemiQ |
2,108 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 835pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 40A | -55°C ~ 175°C | 1.7 V @ 20 A |
|
|
GP3D050A065BSIC SCHOTTKY RECTIFIER SemiQ |
2,476 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1946pF @ 1V, 1MHz | - | 125 µA @ 650 V | 650 V | 135A (DC) | -55°C ~ 175°C | 1.6 V @ 50 A |
|
|
GP3D020A170BSIC SCHOTTKY DIODE 1700V TO247-2 SemiQ |
2,249 | - |
RFQ |
ورقة البيانات |
Tube | RoHS | - | - | Active | - | - | - | - | 1700 V | 20A | - | - | |
|
GP2D050A120BDIODE SCHOTTKY 1.2KV 50A TO247-2 SemiQ |
3,516 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 3174pF @ 1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 50A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A |
|
GP2D003A060CDIODE SCHOTTKY 600V 3A DPAK-2 SemiQ |
2,404 | - |
RFQ |
ورقة البيانات |
Tape & Reel (TR),Cut Tape (CT) | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 158pF @ 1V, 1MHz | 0 ns | 10 µA @ 600 V | 600 V | 3A (DC) | -55°C ~ 175°C | 1.65 V @ 3 A |
|
GP2D003A065ADIODE SCHOTTKY 650V 3A TO220-2 SemiQ |
2,889 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 158pF @ 1V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 3A (DC) | -55°C ~ 175°C | 1.65 V @ 3 A |
|
|
GP2D005A120ADIODE SCHOTTKY 1.2KV 5A TO220-2 SemiQ |
3,632 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 317pF @ 1V, 1MHz | 0 ns | 10 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A |
|
|
GP2D005A120CDIODE SCHOTTKY 1.2KV 5A DPAK-2 SemiQ |
2,889 | - |
RFQ |
ورقة البيانات |
Tape & Reel (TR),Cut Tape (CT) | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 317pF @ 1V, 1MHz | 0 ns | 10 µA @ 1200 V | 1200 V | 5A | -55°C ~ 175°C | 1.8 V @ 5 A |
|
|
GP2D005A170BDIODE SCHOTTKY 1700V 5A TO247-2 SemiQ |
2,395 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 406pF @ 1V, 1MHz | 0 ns | 10 µA @ 1700 V | 1700 V | 5A (DC) | -55°C ~ 175°C | 1.75 V @ 5 A |
|
|
GP2D006A065ADIODE SCHOTTKY 650V 6A TO220-2 SemiQ |
2,153 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 316pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 6A | -55°C ~ 175°C | 1.65 V @ 6 A |
|
|
GP2D006A065CDIODE SCHOTTKY 650V 6A TO252-2 SemiQ |
2,461 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 316pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 6A (DC) | -55°C ~ 175°C | 1.65 V @ 6 A |
|
|
GP2D010A120ADIODE SCHOTTKY 1.2KV 10A TO220-2 SemiQ |
2,782 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 635pF @ 1V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.8 V @ 10 A |
|
|
GP2D010A120BDIODE SCHOTTKY 1.2KV 10A TO247-2 SemiQ |
3,576 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 635pF @ 1V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.8 V @ 10 A |
|
|
GP2D010A120CDIODE SCHOTTKY 1.2KV 10A TO252-2 SemiQ |
3,507 | - |
RFQ |
ورقة البيانات |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 635pF @ 1V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
GP2D010A170BDIODE SCHOTTKY 1.7KV 10A TO247-2 SemiQ |
3,655 | - |
RFQ |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 812pF @ 1V, 1MHz | 0 ns | 20 µA @ 1700 V | 1700 V | 10A | -55°C ~ 175°C | 1.75 V @ 10 A |
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