المزيد من فئات المنتجات

الثنائيات - مقومات - أحادية

رقم جزء الشركة المصنعة	حالة المخزون	السعر	الكمية	ورقة البيانات	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
IRD3CH53DD6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,331	-	RFQ	ورقة البيانات	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH53DF6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	3,593	-	RFQ	ورقة البيانات	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH5BD6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	3,123	-	RFQ	ورقة البيانات	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH5DB6 DIODE GEN PURP 1.2KV 5A DIE Infineon Technologies	3,406	-	RFQ	ورقة البيانات	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	96 ns	100 nA @ 1200 V	1200 V	5A	-40°C ~ 150°C	2.7 V @ 5 A
IRD3CH82DB6 DIODE GEN PURP 1.2KV 150A DIE Infineon Technologies	2,172	-	RFQ	ورقة البيانات	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	355 ns	3 µA @ 1200 V	1200 V	150A	-40°C ~ 150°C	2.7 V @ 150 A
IRD3CH82DD6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,497	-	RFQ	ورقة البيانات	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH82DF6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,315	-	RFQ	ورقة البيانات	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH9DB6 DIODE GEN PURP 1.2KV 10A DIE Infineon Technologies	3,219	-	RFQ	ورقة البيانات	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	154 ns	200 nA @ 1200 V	1200 V	10A	-40°C ~ 150°C	2.7 V @ 10 A
IRD3CH9DD6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	3,832	-	RFQ	ورقة البيانات	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IRD3CH9DF6 DIODE CHIP EMITTER CONTROLLED Infineon Technologies	2,829	-	RFQ	ورقة البيانات	Bulk		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IDD04SG60CHUMA1 DIODE SCHOTTKY 600V 4A TO252-3 Infineon Technologies	2,231	-	RFQ		Tape & Reel (TR)		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IDD06SG60CHUMA1 DIODE SCHOTTKY 600V 6A TO252-3 Infineon Technologies	2,363	-	RFQ		Tape & Reel (TR)		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IDH06G65C6XKSA1 DIODE SCHOTTKY 650V 16A TO220-2 Infineon Technologies	500	-	RFQ	ورقة البيانات	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	302pF @ 1V, 1MHz	0 ns	20 µA @ 420 V	650 V	16A (DC)	-55°C ~ 175°C	1.35 V @ 6 A
IDC08S120EX1SA3 DIODE SCHOTTKY 1.2KV 7.5A WAFER Infineon Technologies	3,696	-	RFQ	ورقة البيانات	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	380pF @ 1V, 1MHz	0 ns	180 µA @ 1200 V	1200 V	7.5A (DC)	-55°C ~ 175°C	1.8 V @ 7.5 A
IDC08S120EX7SA1 DIODE SCHOTTKY 1.2KV 7.5A WAFER Infineon Technologies	3,099	-	RFQ	ورقة البيانات	Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Surface Mount	380pF @ 1V, 1MHz	0 ns	180 µA @ 1200 V	1200 V	7.5A (DC)	-55°C ~ 175°C	1.8 V @ 7.5 A
IDDD04G65C6XTMA1 DIODE SCHOT 650V 13A HDSOP-10-1 Infineon Technologies	3,560	-	RFQ	ورقة البيانات	Tape & Reel (TR),Cut Tape (CT),Bulk	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	205pF @ 1V, 1MHz	0 ns	14 µA @ 420 V	650 V	13A (DC)	-55°C ~ 175°C	-
IDH10G65C5ZXKSA2 DIODE SCHOTTKY 650V 10A TO220-2 Infineon Technologies	3,042	-	RFQ	ورقة البيانات	Tube		RoHS	-	-	Active	-	-	-	-	-	-	-	-
IDT04S60CHKSA1 DIODE SCHOTTKY 600V TO220-2 Infineon Technologies	3,064	-	RFQ	ورقة البيانات	Tube		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IDT05S60CHKSA1 DIODE SCHOTTKY 600V TO220-2 Infineon Technologies	2,177	-	RFQ	ورقة البيانات	Tube		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
IDT06S60CHKSA1 DIODE SCHOTTKY 600V TO220-2 Infineon Technologies	3,009	-	RFQ	ورقة البيانات	Tube		RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-