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| الصورة: | رقم جزء الشركة المصنعة | حالة المخزون | السعر | الكمية | ورقة البيانات | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYC5B-600,118DIODE GEN PURP 500V 5A D2PAK WeEn Semiconductors |
3,085 | - |
RFQ |
ورقة البيانات |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 100 µA @ 600 V | 500 V | 5A | 150°C (Max) | 2.9 V @ 5 A | |
|
|
BYC8B-600,118DIODE GEN PURP 500V 8A D2PAK WeEn Semiconductors |
2,001 | - |
RFQ |
ورقة البيانات |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 52 ns | 150 µA @ 600 V | 500 V | 8A | 150°C (Max) | 2.9 V @ 8 A | |
|
BYR29-600,127DIODE GEN PURP 600V 8A TO220AC WeEn Semiconductors |
2,901 | - |
RFQ |
ورقة البيانات |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 8A | 150°C (Max) | 1.5 V @ 8 A | |
|
BYR29X-600,127DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors |
2,447 | - |
RFQ |
ورقة البيانات |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 8A | 150°C (Max) | 1.7 V @ 8 A | |
|
|
BYV29B-600,118DIODE GEN PURP 600V 9A D2PAK WeEn Semiconductors |
3,892 | - |
RFQ |
ورقة البيانات |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 50 µA @ 600 V | 600 V | 9A | 150°C (Max) | 1.25 V @ 8 A | |
|
NXPSC06650D6JDIODE SCHOTTKY 650V 6A DPAK WeEn Semiconductors |
7,474 | - |
RFQ |
ورقة البيانات |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | |
|
WNSC12650T6JSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
3,000 | - |
RFQ |
ورقة البيانات |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 328pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 12A | 175°C | 1.8 V @ 12 A | |
|
|
BYC20D-600PQDIODE GEN PURP 600V 20A TO220AC WeEn Semiconductors |
2,544 | - |
RFQ |
ورقة البيانات |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 10 µA @ 600 V | 600 V | 20A | 175°C (Max) | 2.9 V @ 20 A | |
|
NUR460P/L05UDIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors |
2,832 | - |
RFQ |
ورقة البيانات |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 10 µA @ 1.5 V | 600 V | 4A | - | 1.28 V @ 4 A | |
|
|
NUR460P/L06UDIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors |
2,529 | - |
RFQ |
ورقة البيانات |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | - | 1.28 V @ 4 A | |
|
|
NUR460P/L07UDIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors |
3,152 | - |
RFQ |
ورقة البيانات |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | - | 1.28 V @ 4 A | |
|
|
NUR460PUDIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors |
3,128 | - |
RFQ |
ورقة البيانات |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | - | 1.28 V @ 4 A | |
|
|
WNSC6D04650QSILICON CARBIDE SCHOTTKY DIODE I WeEn Semiconductors |
3,000 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 233pF @ 1V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 4A | 175°C | 1.4 V @ 4 A | ||
|
|
WNSC2D06650XQSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
3,000 | - |
RFQ |
ورقة البيانات |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 198pF @ 1V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 6A | 175°C | 1.7 V @ 6 A | |
|
|
BYC10X-600,127DIODE GEN PURP 500V 10A TO220FP WeEn Semiconductors |
3,986 | - |
RFQ |
ورقة البيانات |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 200 µA @ 600 V | 500 V | 10A | 150°C (Max) | 2.9 V @ 10 A | |
|
|
BYC15X-600,127DIODE GEN PURP 500V 15A TO220F WeEn Semiconductors |
3,641 | - |
RFQ |
ورقة البيانات |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 200 µA @ 600 V | 500 V | 15A | 150°C (Max) | 2.9 V @ 15 A | |
|
|
BYC5X-600,127DIODE GEN PURP 500V 5A TO220FP WeEn Semiconductors |
2,821 | - |
RFQ |
ورقة البيانات |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 100 µA @ 600 V | 500 V | 5A | 150°C (Max) | 2.9 V @ 5 A | |
|
|
BYV25X-600,127DIODE GEN PURP 600V 5A TO220FP WeEn Semiconductors |
2,758 | - |
RFQ |
ورقة البيانات |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 600 V | 600 V | 5A | 150°C (Max) | 1.3 V @ 5 A | |
|
|
BYC5-600,127DIODE GEN PURP 500V 5A TO220AC WeEn Semiconductors |
5,562 | - |
RFQ |
ورقة البيانات |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 100 µA @ 600 V | 500 V | 5A | 150°C (Max) | 2.9 V @ 5 A | |
|
|
WND10P08XQSTANDARD POWER DIODE WeEn Semiconductors |
4,852 | - |
RFQ |
ورقة البيانات |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 800 V | 800 V | 10A | 150°C | 1.3 V @ 10 A |
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