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PMIC - مشغلات البوابة

رقم جزء الشركة المصنعة	حالة المخزون	السعر	الكمية	ورقة البيانات	Packaging	Series	ProductStatus	DrivenConfiguration	ChannelType	NumberofDrivers	GateType	Voltage-Supply	LogicVoltage-VILVIH	Current-PeakOutput(SourceSink)	InputType	HighSideVoltage-Max(Bootstrap)	Rise/FallTime(Typ)	OperatingTemperature	MountingType
IR4427STR IC GATE DRVR LOW-SIDE 8SOIC Infineon Technologies	3,583	-	RFQ	ورقة البيانات	Tape & Reel (TR)	-	Obsolete	Low-Side	Independent	2	IGBT, N-Channel MOSFET	6V ~ 20V	0.8V, 2.7V	2.3A, 3.3A	Non-Inverting	-	15ns, 10ns	-40°C ~ 150°C (TJ)	Surface Mount
IR4428STR IC GATE DRVR LOW-SIDE 8SOIC Infineon Technologies	2,729	-	RFQ	ورقة البيانات	Tape & Reel (TR)	-	Obsolete	Low-Side	Independent	2	IGBT, N-Channel MOSFET	6V ~ 20V	0.8V, 2.7V	2.3A, 3.3A	Inverting, Non-Inverting	-	15ns, 10ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2277SPBF IR2277S - GATE DRIVER Infineon Technologies	3,433	-	RFQ	ورقة البيانات	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
TLE9180D31QKXUMA1 IC MOTOR CONTROLLER 64-LQFP Infineon Technologies	2,623	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q100	Active	Half-Bridge	3-Phase	2	N-Channel MOSFET	5.5V ~ 60V	-	1A, 1A	Non-Inverting	-	-	-40°C ~ 150°C (TJ)	Surface Mount
IR2104S IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	3,381	-	RFQ	ورقة البيانات	Tube	-	Obsolete	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Non-Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2151 IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,350	-	RFQ	ورقة البيانات	Tube	-	Obsolete	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	-	125mA, 250mA	RC Input Circuit	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Through Hole
98-0247 IC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies	2,478	-	RFQ	ورقة البيانات	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3V ~ 20V	6V, 9.5V	2A, 2A	Non-Inverting	600 V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2133 IC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies	3,932	-	RFQ	ورقة البيانات	Tube	-	Obsolete	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.2V	250mA, 500mA	Inverting	600 V	90ns, 40ns	125°C (TJ)	Through Hole
IR2101 IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,406	-	RFQ	ورقة البيانات	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Non-Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR2104 IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	3,107	-	RFQ	ورقة البيانات	Tube	-	Obsolete	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Non-Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR2106 IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,320	-	RFQ	ورقة البيانات	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR2108 IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,279	-	RFQ	ورقة البيانات	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR2110 IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	2,436	-	RFQ	ورقة البيانات	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3V ~ 20V	6V, 9.5V	2A, 2A	Non-Inverting	500 V	25ns, 17ns	-40°C ~ 150°C (TJ)	Through Hole
IR2111 IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	3,341	-	RFQ	ورقة البيانات	Tube	-	Obsolete	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	8.3V, 12.6V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Through Hole
IR2112 IC GATE DRVR HI/LOW SIDE 14DIP Infineon Technologies	3,397	-	RFQ	ورقة البيانات	Tube	-	Obsolete	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Through Hole
IR2113 IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	2,961	-	RFQ	ورقة البيانات	Tube	-	Obsolete	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3V ~ 20V	6V, 9.5V	2A, 2A	Non-Inverting	600 V	25ns, 17ns	-40°C ~ 150°C (TJ)	Through Hole
IR2117 IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies	2,615	-	RFQ	ورقة البيانات	Tube	-	Obsolete	High-Side	Single	1	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Through Hole
IR2125 IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies	2,192	-	RFQ	ورقة البيانات	Tube	-	Obsolete	High-Side	Single	1	IGBT, N-Channel MOSFET	0V ~ 18V	0.8V, 2.2V	1.6A, 3.3A	Non-Inverting	500 V	43ns, 26ns	-40°C ~ 150°C (TJ)	Through Hole
IR2127 IC GATE DRV HI-SIDE/LO-SIDE 8DIP Infineon Technologies	3,113	-	RFQ	ورقة البيانات	Tube	-	Obsolete	High-Side or Low-Side	Single	1	IGBT, N-Channel MOSFET	12V ~ 20V	0.8V, 3V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Through Hole
IR2130 IC GATE DRVR HALF-BRIDGE 28DIP Infineon Technologies	2,991	-	RFQ	ورقة البيانات	Tube	-	Obsolete	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.2V	250mA, 500mA	Inverting	600 V	80ns, 35ns	-40°C ~ 150°C (TJ)	Through Hole