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ترانزستورات - ترانزستورات تأثير المجال (FET)، ترانزستورات موسفت (MOSFET) - مصفوفات

رقم جزء الشركة المصنعة	حالة المخزون	السعر	الكمية	ورقة البيانات	Packaging	Series	ProductStatus	FETType	FETFeature	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	InputCapacitance(Ciss)(Max)@Vds	Power-Max	OperatingTemperature	MountingType
ALD310704SCL MOSFET 4 P-CH 8V 16SOIC Advanced Linear Devices Inc.	2,662	-	RFQ	ورقة البيانات	Tube	EPAD®, Zero Threshold™	Active	4 P-Channel, Matched Pair	Standard	8V	-	-	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Surface Mount
SLA5061 MOSFET 3N/3P-CH 60V 10A/6A 12SIP Sanken	2,561	-	RFQ	ورقة البيانات	Bulk	-	Active	3 N and 3 P-Channel (3-Phase Bridge)	Logic Level Gate	60V	10A, 6A	140mOhm @ 5A, 4V	-	-	460pF @ 10V	5W	150°C (TJ)	Through Hole
ALD114904APAL MOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc.	2,819	-	RFQ	ورقة البيانات	Tube	EPAD®	Active	2 N-Channel (Dual) Matched Pair	Depletion Mode	10.6V	12mA, 3mA	500Ohm @ 3.6V	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD114904ASAL MOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc.	2,412	-	RFQ	ورقة البيانات	Tube	EPAD®	Active	2 N-Channel (Dual) Matched Pair	Depletion Mode	10.6V	12mA, 3mA	500Ohm @ 3.6V	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD212900ASAL MOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc.	3,602	-	RFQ	ورقة البيانات	Tube	EPAD®, Zero Threshold™	Active	2 N-Channel (Dual) Matched Pair	Logic Level Gate	10.6V	80mA	14Ohm	10mV @ 20µA	-	30pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD210800PCL MOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc.	2,775	-	RFQ	ورقة البيانات	Tube	EPAD®, Zero Threshold™	Active	4 N-Channel, Matched Pair	Logic Level Gate	10.6V	80mA	25Ohm	20mV @ 10µA	-	15pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD114804PCL MOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc.	3,068	-	RFQ	ورقة البيانات	Tube	EPAD®	Active	4 N-Channel, Matched Pair	Depletion Mode	10.6V	12mA, 3mA	500Ohm @ 3.6V	360mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD210802PCL MOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc.	3,017	-	RFQ	ورقة البيانات	Tube	EPAD®, Zero Threshold™	Active	4 N-Channel, Matched Pair	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD210802SCL MOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc.	3,880	-	RFQ	ورقة البيانات	Tube	EPAD®, Zero Threshold™	Active	4 N-Channel, Matched Pair	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD210804PCL MOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc.	2,347	-	RFQ	ورقة البيانات	Tube	EPAD®, Zero Threshold™	Active	4 N-Channel, Matched Pair	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD210804SCL MOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc.	2,097	-	RFQ	ورقة البيانات	Tube	EPAD®, Zero Threshold™	Active	4 N-Channel, Matched Pair	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD210814PCL MOSFET 4N-CH 10.6V 0.08A 16DIP Advanced Linear Devices Inc.	3,446	-	RFQ		Tube	EPAD®, Zero Threshold™	Active	4 N-Channel, Matched Pair	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	-	-	Through Hole
ALD210814SCL MOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc.	2,936	-	RFQ		Tube	EPAD®, Zero Threshold™	Active	4 N-Channel, Matched Pair	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	-	Surface Mount
ALD114813PCL MOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc.	2,343	-	RFQ	ورقة البيانات	Tube	EPAD®	Active	4 N-Channel, Matched Pair	Depletion Mode	10.6V	12mA, 3mA	500Ohm @ 2.7V	1.26V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole
ALD310700PCL MOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc.	2,907	-	RFQ	ورقة البيانات	Tube	EPAD®, Zero Threshold™	Active	4 P-Channel, Matched Pair	Standard	8V	-	-	20mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Through Hole
ALD310702PCL MOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc.	3,507	-	RFQ	ورقة البيانات	Tube	EPAD®, Zero Threshold™	Active	4 P-Channel, Matched Pair	Standard	8V	-	-	180mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Through Hole
ALD1102BSAL MOSFET 2P-CH 10.6V 8SOIC Advanced Linear Devices Inc.	2,812	-	RFQ	ورقة البيانات	Tube	-	Active	2 P-Channel (Dual) Matched Pair	Standard	10.6V	-	-	-	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD1101BSAL MOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc.	3,540	-	RFQ	ورقة البيانات	Tube	-	Active	2 N-Channel (Dual) Matched Pair	Standard	10.6V	40mA	-	-	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount
ALD212914PAL MOSFET 2N-CH 10.6V 0.08A 8DIP Advanced Linear Devices Inc.	3,262	-	RFQ		Tube	EPAD®, Zero Threshold™	Active	2 N-Channel (Dual) Matched Pair	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	-	Through Hole
ALD212914SAL MOSFET 2N-CH 10.6V 0.08A 8SOIC Advanced Linear Devices Inc.	3,693	-	RFQ		Tube	EPAD®, Zero Threshold™	Active	2 N-Channel (Dual) Matched Pair	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	-	Surface Mount