ترانزستورات - ترانزستورات تأثير المجال (FET)، ترانزستورات موسفت (MOSFET) - مصفوفات

الصورة: رقم جزء الشركة المصنعة حالة المخزون السعر الكمية ورقة البيانات Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
ALD310704SCL

ALD310704SCL

MOSFET 4 P-CH 8V 16SOIC

Advanced Linear Devices Inc.
2,662 -

RFQ

ALD310704SCL

ورقة البيانات

Tube EPAD®, Zero Threshold™ Active 4 P-Channel, Matched Pair Standard 8V - - 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C Surface Mount
SLA5061

SLA5061

MOSFET 3N/3P-CH 60V 10A/6A 12SIP

Sanken
2,561 -

RFQ

SLA5061

ورقة البيانات

Bulk - Active 3 N and 3 P-Channel (3-Phase Bridge) Logic Level Gate 60V 10A, 6A 140mOhm @ 5A, 4V - - 460pF @ 10V 5W 150°C (TJ) Through Hole
ALD114904APAL

ALD114904APAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.
2,819 -

RFQ

ALD114904APAL

ورقة البيانات

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD114904ASAL

ALD114904ASAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
2,412 -

RFQ

ALD114904ASAL

ورقة البيانات

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD212900ASAL

ALD212900ASAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.
3,602 -

RFQ

ALD212900ASAL

ورقة البيانات

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA 14Ohm 10mV @ 20µA - 30pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD210800PCL

ALD210800PCL

MOSFET 4N-CH 10.6V 0.08A 16DIP

Advanced Linear Devices Inc.
2,775 -

RFQ

ALD210800PCL

ورقة البيانات

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 20mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD114804PCL

ALD114804PCL

MOSFET 4N-CH 10.6V 16DIP

Advanced Linear Devices Inc.
3,068 -

RFQ

ALD114804PCL

ورقة البيانات

Tube EPAD® Active 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD210802PCL

ALD210802PCL

MOSFET 4N-CH 10.6V 0.08A 16DIP

Advanced Linear Devices Inc.
3,017 -

RFQ

ALD210802PCL

ورقة البيانات

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Through Hole
ALD210802SCL

ALD210802SCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.
3,880 -

RFQ

ALD210802SCL

ورقة البيانات

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD210804PCL

ALD210804PCL

MOSFET 4N-CH 10.6V 0.08A 16DIP

Advanced Linear Devices Inc.
2,347 -

RFQ

ALD210804PCL

ورقة البيانات

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Through Hole
ALD210804SCL

ALD210804SCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.
2,097 -

RFQ

ALD210804SCL

ورقة البيانات

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD210814PCL

ALD210814PCL

MOSFET 4N-CH 10.6V 0.08A 16DIP

Advanced Linear Devices Inc.
3,446 -

RFQ

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - - - Through Hole
ALD210814SCL

ALD210814SCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.
2,936 -

RFQ

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW - Surface Mount
ALD114813PCL

ALD114813PCL

MOSFET 4N-CH 10.6V 16DIP

Advanced Linear Devices Inc.
2,343 -

RFQ

ALD114813PCL

ورقة البيانات

Tube EPAD® Active 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD310700PCL

ALD310700PCL

MOSFET 4 P-CH 8V 16DIP

Advanced Linear Devices Inc.
2,907 -

RFQ

ALD310700PCL

ورقة البيانات

Tube EPAD®, Zero Threshold™ Active 4 P-Channel, Matched Pair Standard 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C Through Hole
ALD310702PCL

ALD310702PCL

MOSFET 4 P-CH 8V 16DIP

Advanced Linear Devices Inc.
3,507 -

RFQ

ALD310702PCL

ورقة البيانات

Tube EPAD®, Zero Threshold™ Active 4 P-Channel, Matched Pair Standard 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C Through Hole
ALD1102BSAL

ALD1102BSAL

MOSFET 2P-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
2,812 -

RFQ

ALD1102BSAL

ورقة البيانات

Tube - Active 2 P-Channel (Dual) Matched Pair Standard 10.6V - - - - - 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD1101BSAL

ALD1101BSAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
3,540 -

RFQ

ALD1101BSAL

ورقة البيانات

Tube - Active 2 N-Channel (Dual) Matched Pair Standard 10.6V 40mA - - - - 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD212914PAL

ALD212914PAL

MOSFET 2N-CH 10.6V 0.08A 8DIP

Advanced Linear Devices Inc.
3,262 -

RFQ

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW - Through Hole
ALD212914SAL

ALD212914SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.
3,693 -

RFQ

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW - Surface Mount
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1500+ متوسط RFQ اليومي
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1800+ المصنعين حول العالم
15,000+
15,000+ المخزن المتاح
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