ترانزستورات - ترانزستورات تأثير المجال (FET)، ترانزستورات موسفت (MOSFET) - أحادية

الصورة: رقم جزء الشركة المصنعة حالة المخزون السعر الكمية ورقة البيانات Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFN44N100P

IXFN44N100P

MOSFET N-CH 1000V 37A SOT-227B

IXYS
3,155 -

RFQ

IXFN44N100P

ورقة البيانات

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 220mOhm @ 22A, 10V 6.5V @ 1mA 305 nC @ 10 V ±30V 19000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFR32N100Q3

IXFR32N100Q3

MOSFET N-CH 1000V 23A ISOPLUS247

IXYS
2,598 -

RFQ

IXFR32N100Q3

ورقة البيانات

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) 10V 350mOhm @ 16A, 10V 6.5V @ 8mA 195 nC @ 10 V ±30V 9940 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB40N110Q3

IXFB40N110Q3

MOSFET N-CH 1100V 40A PLUS264

IXYS
3,024 -

RFQ

IXFB40N110Q3

ورقة البيانات

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1100 V 40A (Tc) 10V 260mOhm @ 20A, 10V 6.5V @ 8mA 300 nC @ 10 V ±30V 14000 pF @ 25 V - 1560W (Tc) -55°C ~ 150°C (TJ) Through Hole
MMIX1F180N25T

MMIX1F180N25T

MOSFET N-CH 250V 132A 24SMPD

IXYS
3,326 -

RFQ

MMIX1F180N25T

ورقة البيانات

Tube GigaMOS™, HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 250 V 132A (Tc) 10V 13mOhm @ 90A, 10V 5V @ 8mA 364 nC @ 10 V ±20V 23800 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT3N200P3HV

IXTT3N200P3HV

MOSFET N-CH 2000V 3A TO268

IXYS
2,802 -

RFQ

IXTT3N200P3HV

ورقة البيانات

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 2000 V 3A (Tc) 10V 8Ohm @ 1.5A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 1860 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT50M50JLL

APT50M50JLL

MOSFET N-CH 500V 71A ISOTOP

Microchip Technology
3,558 -

RFQ

APT50M50JLL

ورقة البيانات

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 71A (Tc) 10V 50mOhm @ 35.5A, 10V 5V @ 5mA 200 nC @ 10 V ±30V 10550 pF @ 25 V - 595W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN80N50Q3

IXFN80N50Q3

MOSFET N-CH 500V 63A SOT227B

IXYS
3,039 -

RFQ

IXFN80N50Q3

ورقة البيانات

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 63A (Tc) 10V 65mOhm @ 40A, 10V 6.5V @ 8mA 200 nC @ 10 V ±30V 10000 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MMIX1T132N50P3

MMIX1T132N50P3

MOSFET N-CH 500V 63A POLAR3

IXYS
2,417 -

RFQ

MMIX1T132N50P3

ورقة البيانات

Tube Polar™ Active N-Channel MOSFET (Metal Oxide) 500 V 63A (Tc) 10V 43mOhm @ 66A, 10V 5V @ 8mA 267 nC @ 10 V ±30V 18600 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFN44N80Q3

IXFN44N80Q3

MOSFET N-CH 800V 37A SOT227B

IXYS
3,274 -

RFQ

IXFN44N80Q3

ورقة البيانات

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 800 V 37A (Tc) 10V 190mOhm @ 22A, 10V 6.5V @ 8mA 185 nC @ 10 V ±30V 9840 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN32N100Q3

IXFN32N100Q3

MOSFET N-CH 1000V 28A SOT227B

IXYS
3,251 -

RFQ

IXFN32N100Q3

ورقة البيانات

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 28A (Tc) 10V 320mOhm @ 16A, 10V 6.5V @ 8mA 195 nC @ 10 V ±30V 9940 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT40M35JVR

APT40M35JVR

MOSFET N-CH 400V 93A SOT227

Microchip Technology
3,463 -

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 400 V 93A (Tc) 10V 35mOhm @ 46.5A, 10V 4V @ 5mA 1065 nC @ 10 V ±30V 20160 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
SCTH70N120G2V-7

SCTH70N120G2V-7

SILICON CARBIDE POWER MOSFET 120

STMicroelectronics
3,296 -

RFQ

SCTH70N120G2V-7

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1200 V 90A (Tc) 18V 30mOhm @ 50A, 18V 4.9V @ 1mA 150 nC @ 18 V +22V, -10V 3540 pF @ 800 V - 469W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFN74N100X

IXFN74N100X

MOSFET N-CH 1000V 74A SOT227B

IXYS
2,435 -

RFQ

IXFN74N100X

ورقة البيانات

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 74A (Tc) 10V 66mOhm @ 37A, 10V 5.5V @ 8mA 425 nC @ 10 V ±30V 17000 pF @ 25 V - 1170W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
GA50JT12-247

GA50JT12-247

TRANS SJT 1200V 100A TO247AB

GeneSiC Semiconductor
2,107 -

RFQ

GA50JT12-247

ورقة البيانات

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 100A (Tc) - 25mOhm @ 50A - - - 7209 pF @ 800 V - 583W (Tc) 175°C (TJ) Through Hole
APTML100U60R020T1AG

APTML100U60R020T1AG

MOSFET N-CH 1000V 20A SP1

Microchip Technology
3,544 -

RFQ

APTML100U60R020T1AG

ورقة البيانات

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 20A (Tc) 10V 720mOhm @ 10A, 10V 4V @ 2.5mA - ±30V 6000 pF @ 25 V - 520W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
VMO650-01F

VMO650-01F

MOSFET N-CH 100V 690A Y3-DCB

IXYS
3,712 -

RFQ

VMO650-01F

ورقة البيانات

Bulk HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 690A (Tc) 10V 1.8mOhm @ 500mA, 10V 6V @ 130mA 2300 nC @ 10 V ±20V 59000 pF @ 25 V - 2500W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
BSD316SNL6327XT

BSD316SNL6327XT

MOSFET N-CH 30V 1.4A SOT363-6

Infineon Technologies
732 -

RFQ

BSD316SNL6327XT

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4.5V, 10V 160mOhm @ 1.4A, 10V 2V @ 3.7µA 0.6 nC @ 5 V ±20V 94 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDZ451PZ

FDZ451PZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
9,571 -

RFQ

FDZ451PZ

ورقة البيانات

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.5V, 4.5V 140mOhm @ 2A, 4.5V 1.2V @ 250µA 8.8 nC @ 4.5 V ±8V 555 pF @ 10 V - 400mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002K

2N7002K

N-CHANNEL SMALL SIGNAL MOSFET

HY Electronic (Cayman) Limited
150 -

RFQ

Tape & Reel (TR) 2N7002K Active N-Channel MOSFET (Metal Oxide) 60 V 340mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 1mA - ±20V 40 pF @ 10 V - 350mW (Ta) 150°C (TJ) Surface Mount
PMPB20EN/S500X

PMPB20EN/S500X

PMPB20EN - 30V, N-CHANNEL TRENCH

NXP Semiconductors
5,899 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta) 4.5V, 10V 19.5mOhm @ 7A, 10V 2V @ 250µA 10.8 nC @ 10 V ±20V 435 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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15,000+
15,000+ المخزن المتاح
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