ترانزستورات - ترانزستورات تأثير المجال (FET)، ترانزستورات موسفت (MOSFET) - أحادية

الصورة: رقم جزء الشركة المصنعة حالة المخزون السعر الكمية ورقة البيانات Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTP13N10

NTP13N10

MOSFET N-CH 100V 13A TO220AB

onsemi
2,667 -

RFQ

NTP13N10

ورقة البيانات

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13A (Ta) 10V 165mOhm @ 6.5A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 550 pF @ 25 V - 64.7W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD3055L104-001

NTD3055L104-001

MOSFET N-CH 60V 12A IPAK

onsemi
2,472 -

RFQ

NTD3055L104-001

ورقة البيانات

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) - 104mOhm @ 6A, 5V 2V @ 250µA 20 nC @ 5 V - 440 pF @ 25 V - - - Through Hole
NTP30N06L

NTP30N06L

MOSFET N-CH 60V 30A TO220AB

onsemi
2,355 -

RFQ

NTP30N06L

ورقة البيانات

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Ta) 5V 46mOhm @ 15A, 5V 2V @ 250µA 32 nC @ 5 V ±15V 1150 pF @ 25 V - 88.2W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD60N03-001

NTD60N03-001

MOSFET N-CH 28V 60A IPAK

onsemi
29,240 -

RFQ

NTD60N03-001

ورقة البيانات

Bulk,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 28 V 60A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V 3V @ 250µA 30 nC @ 4.5 V ±20V 2150 pF @ 24 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z34NLPBF

IRF9Z34NLPBF

PLANAR 40<-<100V

Infineon Technologies
335 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1447LS

2SK1447LS

2SK1447 - N-CHANNEL SILICON MOSF

Sanyo
7,333 -

RFQ

2SK1447LS

ورقة البيانات

Bulk * Active - - - - - - - - - - - - - -
BUK6E3R2-55C,127

BUK6E3R2-55C,127

NEXPERIA BUK6E3R2-55C - 120A, 55

NXP Semiconductors
4,973 -

RFQ

BUK6E3R2-55C,127

ورقة البيانات

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 3.2mOhm @ 25A, 10V 2.8V @ 1mA 258 nC @ 10 V ±16V 15300 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI4N80TU

FQI4N80TU

MOSFET N-CH 800V 3.9A I2PAK

Fairchild Semiconductor
2,146 -

RFQ

FQI4N80TU

ورقة البيانات

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 3.6Ohm @ 1.95A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 880 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R380P6

IPA60R380P6

600V COOLMOS POWER TRANSISTOR

Infineon Technologies
313 -

RFQ

IPA60R380P6

ورقة البيانات

Bulk * Active - - - - - - - - - - - - - -
NP32N055SDE-E1-AZ

NP32N055SDE-E1-AZ

NP32N055SDE-E1-AZ - MOS FIELD EF

Renesas
10,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 32A (Tc) 4.5V, 10V 24mOhm @ 16A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2000 pF @ 25 V - 1.2W (Ta), 66W (Tc) 175°C Surface Mount
FDB9409-F085

FDB9409-F085

MOSFET N-CH 40V 80A D2PAK

Fairchild Semiconductor
5,478 -

RFQ

FDB9409-F085

ورقة البيانات

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.5mOhm @ 80A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2980 pF @ 25 V - 94W (Tj) -55°C ~ 175°C (TJ) Surface Mount
NTMFS4931NT1G-IRH1

NTMFS4931NT1G-IRH1

NTMFS4931 - MOSFET N CHANNEL SIN

onsemi
5,197 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta) 4.5V, 10V 1.1mOhm @ 30A, 10V 2.2V @ 250µA 128 nC @ 10 V ±20V 9821 pF @ 15 V - 950mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR2405TRL

AUIRFR2405TRL

AUIRFR2405 - MOSFET N-CHANNEL SI

International Rectifier
3,000 -

RFQ

AUIRFR2405TRL

ورقة البيانات

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) - 16mOhm @ 34A, 10V 4V @ 250µA 110 nC @ 10 V - 2430 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP12N50

FDP12N50

MOSFET N-CH 500V 11.5A TO220-3

Fairchild Semiconductor
1,304 -

RFQ

FDP12N50

ورقة البيانات

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Tc) 10V 650mOhm @ 6A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1315 pF @ 25 V - 165W (Tc) -55°C ~ 150°C (TJ) Through Hole
GC20N65F

GC20N65F

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Goford Semiconductor
2,197 -

RFQ

GC20N65F

ورقة البيانات

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 170mOhm @ 10A, 10V 4.5V @ 250µA 39 nC @ 10 V ±30V 1724 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7480MTRPBF

IRF7480MTRPBF

MOSFET N-CH 40V 217A DIRECTFET

Infineon Technologies
2,128 -

RFQ

IRF7480MTRPBF

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 217A (Tc) 6V, 10V 1.2mOhm @ 132A, 10V 3.9V @ 150µA 185 nC @ 10 V ±20V 6680 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS7437TRL7PP

IRFS7437TRL7PP

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
551 -

RFQ

IRFS7437TRL7PP

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7437 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
GC20N65T

GC20N65T

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Goford Semiconductor
100 -

RFQ

GC20N65T

ورقة البيانات

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 170mOhm @ 10A, 10V 4.5V @ 250µA 39 nC @ 10 V ±30V 1724 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF19N20

FQPF19N20

MOSFET N-CH 200V 11.8A TO220F

Fairchild Semiconductor
10,000 -

RFQ

FQPF19N20

ورقة البيانات

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 11.8A (Tc) 10V 150mOhm @ 5.9A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF1300N80ZYD

FCPF1300N80ZYD

MOSFET N-CH 800V 4A TO220F-3

Fairchild Semiconductor
1,550 -

RFQ

FCPF1300N80ZYD

ورقة البيانات

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2A, 10V 4.5V @ 400µA 21 nC @ 10 V ±20V 880 pF @ 100 V - 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
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20,000.000 وحدة المنتج القياسية
1800+
1800+ المصنعين حول العالم
15,000+
15,000+ المخزن المتاح
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