ترانزستورات - ترانزستورات تأثير المجال (FET)، ترانزستورات موسفت (MOSFET) - أحادية

الصورة: رقم جزء الشركة المصنعة حالة المخزون السعر الكمية ورقة البيانات Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDZ375P

FDZ375P

MOSFET P-CH 20V 3.7A 4WLCSP

Fairchild Semiconductor
4,885 -

RFQ

FDZ375P

ورقة البيانات

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 3.7A (Ta) 1.5V, 4.5V 78mOhm @ 2A, 4.5V 1.2V @ 250µA 15 nC @ 4.5 V ±8V 865 pF @ 10 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PSMN4R3-80PS,127

PSMN4R3-80PS,127

NEXPERIA PSMN4R3-80PS - 120A, 80

NXP Semiconductors
6,706 -

RFQ

PSMN4R3-80PS,127

ورقة البيانات

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4.3mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 8161 pF @ 40 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCP165N65S3R0

FCP165N65S3R0

FCP165N65S3R0 - POWER MOSFET, N-

Fairchild Semiconductor
2,115 -

RFQ

Bulk SuperFET® III Obsolete N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4.5V @ 440mA 39 nC @ 10 V ±30V 1500 pF @ 400 V - 154W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SB817D

2SB817D

2SB817 - P-CHANNEL SILICON MOSFE

onsemi
1,357 -

RFQ

2SB817D

ورقة البيانات

Bulk * Active - - - - - - - - - - - - - -
AUIRL1404ZS

AUIRL1404ZS

AUIRL1404ZS - 20V-40V N-CHANNEL

Infineon Technologies
1,000 -

RFQ

AUIRL1404ZS

ورقة البيانات

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBA1404PPBF

IRFBA1404PPBF

MOSFET N-CH 40V 206A SUPER-220

International Rectifier
258 -

RFQ

IRFBA1404PPBF

ورقة البيانات

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 206A (Tc) 10V 3.7mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 300W (Tc) -40°C ~ 175°C (TJ) Through Hole
2SK3480-AZ

2SK3480-AZ

MOSFET N-CH 100V 50A TO220AB

Renesas Electronics America Inc
1,210 -

RFQ

2SK3480-AZ

ورقة البيانات

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 4.5V, 10V 31mOhm @ 25A, 10V - 74 nC @ 10 V ±20V 3600 pF @ 10 V - 1.5W (Ta), 84W (Tc) 150°C (TJ) Through Hole
IPI60R250CP

IPI60R250CP

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
474 -

RFQ

IPI60R250CP

ورقة البيانات

Bulk * Active - - - - - - - - - - - - - -
IPB65R190CFD7AATMA1

IPB65R190CFD7AATMA1

MOSFET N-CH 650V 14A TO263-3

Infineon Technologies
2,418 -

RFQ

IPB65R190CFD7AATMA1

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) - 190mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1291 pF @ 400 V - 77W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BUK7107-55AIE,118

BUK7107-55AIE,118

NEXPERIA BUK7107 - N-CHANNEL TRE

NXP Semiconductors
2,400 -

RFQ

BUK7107-55AIE,118

ورقة البيانات

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 50A, 10V 4V @ 1mA 116 nC @ 10 V ±20V 4500 pF @ 25 V Current Sensing 272W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UPA2702TP-E2-AZ

UPA2702TP-E2-AZ

UPA2702 - N CHANNEL MOSFET

Renesas
5,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 35A (Tc) 4V, 10V 9.5mOhm @ 7A, 10V 2.5V @ 1mA 9 nC @ 5 V ±20V 900 pF @ 10 V - 3W (Ta), 22W (Tc) 150°C Surface Mount
IPDD60R150G7XTMA1

IPDD60R150G7XTMA1

MOSFET N-CH 600V 16A HDSOP-10

Infineon Technologies
3,672 -

RFQ

IPDD60R150G7XTMA1

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 150mOhm @ 5.3A, 10V 4V @ 260µA 23 nC @ 10 V ±20V 902 pF @ 400 V - 95W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA60R180C7

IPA60R180C7

9A, 600V, 0.18OHM, N-CHANNEL MOS

Infineon Technologies
351 -

RFQ

IPA60R180C7

ورقة البيانات

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
UPA2782GR-E1-A

UPA2782GR-E1-A

UPA2782GR-E1-A - SWITCHINGN-CHAN

Renesas
7,500 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4V, 10V 15mOhm @ 5.5A, 10V 2.5V @ 1mA 7.1 nC @ 5 V ±20V 660 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
SP000681054

SP000681054

SPP15N65C3HKSA1 - COOLMOS N-CHAN

Infineon Technologies
3,000 -

RFQ

SP000681054

ورقة البيانات

Bulk * Active - - - - - - - - - - - - - -
PSMN7R8-120PSQ

PSMN7R8-120PSQ

NEXPERIA PSMN7R8-120PSQ - 70A, 1

Nexperia USA Inc.
600 -

RFQ

PSMN7R8-120PSQ

ورقة البيانات

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 7.9mOhm @ 25A, 10V 4V @ 1mA 167 nC @ 10 V ±20V 9473 pF @ 60 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN7R8-120PSQ

PSMN7R8-120PSQ

MOSFET N-CH 120V 70A I2PAK

NXP USA Inc.
242 -

RFQ

PSMN7R8-120PSQ

ورقة البيانات

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 7.9mOhm @ 25A, 10V 4V @ 1mA 167 nC @ 10 V ±20V 9473 pF @ 60 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA65R190C7

IPA65R190C7

IPA65R190 - 650V AND 700V COOLMO

Infineon Technologies
424 -

RFQ

IPA65R190C7

ورقة البيانات

Bulk * Active - - - - - - - - - - - - - -
FQA13N50C-F109

FQA13N50C-F109

MOSFET N-CH 500V 13.5A TO3P

Fairchild Semiconductor
792 -

RFQ

FQA13N50C-F109

ورقة البيانات

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 13.5A (Tc) 10V 480mOhm @ 6.75A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 218W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS4610TRL

AUIRFS4610TRL

MOSFET N-CH 100V 73A D2PAK

International Rectifier
8,900 -

RFQ

AUIRFS4610TRL

ورقة البيانات

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) - 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V - 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ متوسط RFQ اليومي
20,000.000
20,000.000 وحدة المنتج القياسية
1800+
1800+ المصنعين حول العالم
15,000+
15,000+ المخزن المتاح
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