ترانزستورات - ترانزستورات تأثير المجال (FET)، ترانزستورات موسفت (MOSFET) - أحادية

الصورة: رقم جزء الشركة المصنعة حالة المخزون السعر الكمية ورقة البيانات Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFPS40N60KPBF

IRFPS40N60KPBF

MOSFET N-CH 600V 40A SUPER247

Vishay Siliconix
3,625 -

RFQ

IRFPS40N60KPBF

ورقة البيانات

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 130mOhm @ 24A, 10V 5V @ 250µA 330 nC @ 10 V ±30V 7970 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP044NPBF

IRFP044NPBF

MOSFET N-CH 55V 53A TO247AC

Infineon Technologies
3,929 -

RFQ

IRFP044NPBF

ورقة البيانات

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 20mOhm @ 29A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1500 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP044PBF

IRFP044PBF

MOSFET N-CH 60V 57A TO247-3

Vishay Siliconix
2,771 -

RFQ

IRFP044PBF

ورقة البيانات

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 28mOhm @ 34A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2500 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP344PBF

IRFP344PBF

MOSFET N-CH 450V 9.5A TO247-3

Vishay Siliconix
2,067 -

RFQ

IRFP344PBF

ورقة البيانات

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 9.5A (Tc) 10V 630mOhm @ 5.7A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP048NPBF

IRFP048NPBF

MOSFET N-CH 55V 64A TO247AC

Infineon Technologies
2,022 -

RFQ

IRFP048NPBF

ورقة البيانات

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 16mOhm @ 37A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 1900 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFPS37N50APBF

IRFPS37N50APBF

MOSFET N-CH 500V 36A SUPER247

Vishay Siliconix
3,910 -

RFQ

IRFPS37N50APBF

ورقة البيانات

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 130mOhm @ 22A, 10V 4V @ 250µA 180 nC @ 10 V ±30V 5579 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS3815PBF

IRFPS3815PBF

MOSFET N-CH 150V 105A SUPER247

Infineon Technologies
3,486 -

RFQ

IRFPS3815PBF

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 15mOhm @ 63A, 10V 5V @ 250µA 390 nC @ 10 V ±30V 6810 pF @ 25 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFPS40N50LPBF

IRFPS40N50LPBF

MOSFET N-CH 500V 46A SUPER247

Vishay Siliconix
3,697 -

RFQ

IRFPS40N50LPBF

ورقة البيانات

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 250µA 380 nC @ 10 V ±30V 8110 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3714PBF

IRL3714PBF

MOSFET N-CH 20V 36A TO220AB

Infineon Technologies
2,027 -

RFQ

IRL3714PBF

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3714LPBF

IRL3714LPBF

MOSFET N-CH 20V 36A TO262

Infineon Technologies
3,044 -

RFQ

IRL3714LPBF

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715PBF

IRL3715PBF

MOSFET N-CH 20V 54A TO220AB

Infineon Technologies
3,141 -

RFQ

IRL3715PBF

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3714SPBF

IRL3714SPBF

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies
2,570 -

RFQ

IRL3714SPBF

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2703PBF

IRL2703PBF

MOSFET N-CH 30V 24A TO220AB

Infineon Technologies
3,430 -

RFQ

IRL2703PBF

ورقة البيانات

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 40mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715LPBF

IRL3715LPBF

MOSFET N-CH 20V 54A TO262

Infineon Technologies
3,437 -

RFQ

IRL3715LPBF

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715SPBF

IRL3715SPBF

MOSFET N-CH 20V 54A D2PAK

Infineon Technologies
2,895 -

RFQ

IRL3715SPBF

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3714ZPBF

IRL3714ZPBF

MOSFET N-CH 20V 36A TO220AB

Infineon Technologies
2,165 -

RFQ

IRL3714ZPBF

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 2.55V @ 250µA 7.2 nC @ 4.5 V ±20V 550 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ24NLPBF

IRFZ24NLPBF

MOSFET N-CH 55V 17A TO262

Infineon Technologies
2,139 -

RFQ

IRFZ24NLPBF

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707ZPBF

IRF3707ZPBF

MOSFET N-CH 30V 59A TO220AB

Infineon Technologies
2,201 -

RFQ

IRF3707ZPBF

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 25µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3711ZPBF

IRF3711ZPBF

MOSFET N-CH 20V 92A TO220AB

Infineon Technologies
2,589 -

RFQ

IRF3711ZPBF

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF520NSPBF

IRF520NSPBF

MOSFET N-CH 100V 9.7A D2PAK

Infineon Technologies
2,340 -

RFQ

IRF520NSPBF

ورقة البيانات

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 3.8W (Ta), 48W (Tc) - Surface Mount
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20,000.000 وحدة المنتج القياسية
1800+
1800+ المصنعين حول العالم
15,000+
15,000+ المخزن المتاح
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