ترانزستورات - ترانزستورات تأثير المجال (FET)، ترانزستورات موسفت (MOSFET) - أحادية

الصورة: رقم جزء الشركة المصنعة حالة المخزون السعر الكمية ورقة البيانات Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU1010Z

IRFU1010Z

MOSFET N-CH 55V 42A IPAK

Infineon Technologies
3,880 -

RFQ

IRFU1010Z

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3705Z

IRLR3705Z

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
3,620 -

RFQ

IRLR3705Z

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU3705Z

IRLU3705Z

MOSFET N-CH 55V 42A I-PAK

Infineon Technologies
2,459 -

RFQ

IRLU3705Z

ورقة البيانات

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6613TR1

IRF6613TR1

MOSFET N-CH 40V 23A DIRECTFET

Infineon Technologies
3,437 -

RFQ

IRF6613TR1

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 23A (Ta), 150A (Tc) 4.5V, 10V 3.4mOhm @ 23A, 10V 2.25V @ 250µA 63 nC @ 4.5 V ±20V 5950 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF7410PBF

IRF7410PBF

MOSFET P-CH 12V 16A 8SO

Infineon Technologies
3,807 -

RFQ

IRF7410PBF

ورقة البيانات

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 12 V 16A (Ta) 1.8V, 4.5V 7mOhm @ 16A, 4.5V 900mV @ 250µA 91 nC @ 4.5 V ±8V 8676 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807ZPBF

IRF7807ZPBF

MOSFET N-CH 30V 11A 8SO

Infineon Technologies
1,710 -

RFQ

IRF7807ZPBF

ورقة البيانات

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13.8mOhm @ 11A, 10V 2.25V @ 250µA 11 nC @ 4.5 V ±20V 770 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
P3M06040K3

P3M06040K3

SICFET N-CH 650V 68A TO247-3

PN Junction Semiconductor
138 -

RFQ

P3M06040K3

ورقة البيانات

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 68A 15V 50mOhm @ 40A, 15V 2.4V @ 7.5mA (Typ) - +20V, -8V - - 254W -55°C ~ 175°C (TJ) Through Hole
P3M171K0G7

P3M171K0G7

SICFET N-CH 1700V 7A TO-263-7

PN Junction Semiconductor
100 -

RFQ

P3M171K0G7

ورقة البيانات

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 7A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 100W -55°C ~ 175°C (TJ) Surface Mount
FCH041N65EFL4

FCH041N65EFL4

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
232 -

RFQ

FCH041N65EFL4

ورقة البيانات

Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 41mOhm @ 38A, 10V 5V @ 7.6mA 298 nC @ 10 V ±20V 12560 pF @ 100 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
UJ4C075060B7S

UJ4C075060B7S

750V/60MOHM, N-OFF SIC CASCODE

UnitedSiC
3,715 -

RFQ

UJ4C075060B7S

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 25.8A (Tc) 12V 74mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1420 pF @ 400 V - 128W (Tc) -55°C ~ 175°C (TJ)
FCH041N65F-F085

FCH041N65F-F085

MOSFET N-CH 650V 76A TO247-3

Fairchild Semiconductor
207 -

RFQ

FCH041N65F-F085

ورقة البيانات

Bulk Automotive, AEC-Q101, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 41mOhm @ 38A, 10V 5V @ 250µA 304 nC @ 10 V ±20V 13566 pF @ 25 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
UJ4C075033B7S

UJ4C075033B7S

750V/33MOHM, N-OFF SIC CASCODE

UnitedSiC
2,063 -

RFQ

UJ4C075033B7S

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 44A (Tc) 12V 41mOhm @ 30A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 197W (Tc) -55°C ~ 175°C (TJ)
P3M12040K3

P3M12040K3

SICFET N-CH 1200V 63A TO-247-3

PN Junction Semiconductor
2,962 -

RFQ

P3M12040K3

ورقة البيانات

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A 15V 48mOhm @ 40A, 15V 2.2V @ 40mA (Typ) - +21V, -8V - - 349W -55°C ~ 175°C (TJ) Through Hole
IRF350

IRF350

MOSFET N-CH 400V 14A TO3

NTE Electronics, Inc
2,705 -

RFQ

IRF350

ورقة البيانات

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 14A (Tc) 10V 400mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2600 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
P3M12025K4

P3M12025K4

SICFET N-CH 1200V 112A TO-247-4

PN Junction Semiconductor
2,623 -

RFQ

P3M12025K4

ورقة البيانات

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 112A 15V 35mOhm @ 50A, 15V 2.2V @ 50mA (Typ) - +19V, -8V - - 577W -55°C ~ 175°C (TJ) Through Hole
P3M07013K4

P3M07013K4

SICFET N-CH 750V 140A TO-247-4

PN Junction Semiconductor
2,423 -

RFQ

P3M07013K4

ورقة البيانات

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 750 V 140A 15V 16mOhm @ 75A, 15V 2.2V @ 75mA (Typ) - +19V, -8V - - 428W -55°C ~ 175°C (TJ) Through Hole
P3M17040K4

P3M17040K4

SICFET N-CH 1700V 73A TO-247-4

PN Junction Semiconductor
3,811 -

RFQ

P3M17040K4

ورقة البيانات

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 73A 15V 60mOhm @ 50A, 15V 2.2V @ 50mA (Typ) - +19V, -8V - - 536W -55°C ~ 175°C (TJ) Through Hole
IV1Q12050T3

IV1Q12050T3

SIC MOSFET, 1200V 50MOHM, TO-247

Inventchip
3,877 -

RFQ

IV1Q12050T3

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 58A (Tc) 20V 65mOhm @ 20A, 20V 3.2V @ 6mA 120 nC @ 20 V +20V, -5V 2770 pF @ 800 V - 327W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ4SC075009B7S

UJ4SC075009B7S

750V/9MOHM, N-OFF SIC STACK CASC

UnitedSiC
2,214 -

RFQ

UJ4SC075009B7S

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 750 V 106A (Tc) 12V 11.5mOhm @ 70A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3340 pF @ 400 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
6BP16-2

6BP16-2

6BP16 - 16 CHAN BP W RS-232

Analog Devices Inc.
2,311 -

RFQ

6BP16-2

ورقة البيانات

Bulk * Active - - - - - - - - - - - - - -
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1500+ متوسط RFQ اليومي
20,000.000
20,000.000 وحدة المنتج القياسية
1800+
1800+ المصنعين حول العالم
15,000+
15,000+ المخزن المتاح
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