ترانزستورات - ترانزستورات تأثير المجال (FET)، ترانزستورات موسفت (MOSFET) - أحادية

الصورة: رقم جزء الشركة المصنعة حالة المخزون السعر الكمية ورقة البيانات Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
EPC8002

EPC8002

GANFET N-CH 65V 2A DIE

EPC
2,065 -

RFQ

EPC8002

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 65 V 2A (Ta) 5V 530mOhm @ 500mA, 5V 2.5V @ 250µA - +6V, -4V 21 pF @ 32.5 V - - -40°C ~ 150°C (TJ) Surface Mount
EPC2059

EPC2059

TRANS GAN 170V DIE .009OHM

EPC
3,434 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - -
EPC2066

EPC2066

TRANSISTOR GAN 40V .001OHM

EPC
13,137 -

RFQ

EPC2066

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 40 V 90A (Ta) 5V 1.1mOhm @ 50A, 5V 2.5V @ 28mA 33 nC @ 5 V +6V, -4V 4523 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
SCT2H12NYTB

SCT2H12NYTB

SICFET N-CH 1700V 4A TO268

Rohm Semiconductor
2,975 -

RFQ

SCT2H12NYTB

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1700 V 4A (Tc) 18V 1.5Ohm @ 1.1A, 18V 4V @ 410µA 14 nC @ 18 V +22V, -6V 184 pF @ 800 V - 44W (Tc) 175°C (TJ) Surface Mount
EPC2302

EPC2302

TRANS GAN 100V DIE .0019OHM

EPC
2,571 -

RFQ

EPC2302

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 101A (Ta) 5V 1.8mOhm @ 50A, 5V 2.5V @ 14mA 23 nC @ 5 V +6V, -4V 3200 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
SCT3160KW7TL

SCT3160KW7TL

SICFET N-CH 1200V 17A TO263-7

Rohm Semiconductor
3,930 -

RFQ

SCT3160KW7TL

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) - 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - 100W 175°C (TJ) Surface Mount
SCT2H12NZGC11

SCT2H12NZGC11

SICFET N-CH 1700V 3.7A TO3PFM

Rohm Semiconductor
3,938 -

RFQ

SCT2H12NZGC11

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 3.7A (Tc) 18V 1.5Ohm @ 1.1A, 18V 4V @ 900µA 14 nC @ 18 V +22V, -6V 184 pF @ 800 V - 35W (Tc) 175°C (TJ) Through Hole
SCT3120ALGC11

SCT3120ALGC11

SICFET N-CH 650V 21A TO247N

Rohm Semiconductor
3,901 -

RFQ

SCT3120ALGC11

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) 18V 156mOhm @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 460 pF @ 500 V - 103W (Tc) 175°C (TJ) Through Hole
SCT3060ALGC11

SCT3060ALGC11

SICFET N-CH 650V 39A TO247N

Rohm Semiconductor
3,689 -

RFQ

SCT3060ALGC11

ورقة البيانات

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 39A (Tc) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W (Tc) 175°C (TJ) Through Hole
SCT3080ALHRC11

SCT3080ALHRC11

SICFET N-CH 650V 30A TO247N

Rohm Semiconductor
2,741 -

RFQ

SCT3080ALHRC11

ورقة البيانات

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 134W 175°C (TJ) Through Hole
SCT2080KEHRC11

SCT2080KEHRC11

SICFET N-CH 1200V 40A TO247N

Rohm Semiconductor
2,638 -

RFQ

SCT2080KEHRC11

ورقة البيانات

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 117mOhm @ 10A, 18V 4V @ 4.4mA 106 nC @ 18 V +22V, -6V 2080 pF @ 800 V - - 175°C (TJ) Through Hole
SCT3022ALHRC11

SCT3022ALHRC11

SICFET N-CH 650V 93A TO247N

Rohm Semiconductor
2,969 -

RFQ

SCT3022ALHRC11

ورقة البيانات

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 93A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 133 nC @ 18 V +22V, -4V 2208 pF @ 500 V - 339W 175°C (TJ) Through Hole
SCT3022KLHRC11

SCT3022KLHRC11

SICFET N-CH 1200V 95A TO247N

Rohm Semiconductor
2,931 -

RFQ

SCT3022KLHRC11

ورقة البيانات

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 95A (Tc) 18V 28.6mOhm @ 36A, 18V 5.6V @ 18.2mA 178 nC @ 18 V +22V, -4V 2879 pF @ 800 V - 427W 175°C (TJ) Through Hole
BSS138-7-F

BSS138-7-F

MOSFET N-CH 50V 200MA SOT23-3

Diodes Incorporated
3,748 -

RFQ

BSS138-7-F

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - ±20V 50 pF @ 10 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002K-7

2N7002K-7

MOSFET N-CH 60V 380MA SOT23-3

Diodes Incorporated
3,947 -

RFQ

2N7002K-7

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 380mA (Ta) 5V, 10V 2Ohm @ 500mA, 10V 2.5V @ 1mA 0.3 nC @ 4.5 V ±20V 50 pF @ 25 V - 370mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS84-7-F

BSS84-7-F

MOSFET P-CH 50V 130MA SOT23-3

Diodes Incorporated
2,492 -

RFQ

BSS84-7-F

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 50 V 130mA (Ta) 5V 10Ohm @ 100mA, 5V 2V @ 1mA - ±20V 45 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002BK,215

2N7002BK,215

MOSFET N-CH 60V 350MA TO236AB

Nexperia USA Inc.
279,780 -

RFQ

2N7002BK,215

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Ta) 10V 1.6Ohm @ 500mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 50 pF @ 10 V - 370mW (Ta) 150°C (TJ) Surface Mount
BSS138LT3G

BSS138LT3G

MOSFET N-CH 50V 200MA SOT23-3

onsemi
400,000 -

RFQ

BSS138LT3G

ورقة البيانات

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 5V 3.5Ohm @ 200mA, 5V 1.5V @ 1mA - ±20V 50 pF @ 25 V - 225mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF1405ZSTRL-7P

IRF1405ZSTRL-7P

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies
2,725 -

RFQ

IRF1405ZSTRL-7P

ورقة البيانات

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NIF9N05CLT1

NIF9N05CLT1

MOSFET N-CH 52V 2.6A SOT223

onsemi
2,204 -

RFQ

NIF9N05CLT1

ورقة البيانات

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 52 V 2.6A (Ta) 3V, 10V 125mOhm @ 2.6A, 10V 2.5V @ 100µA 7 nC @ 4.5 V ±15V 250 pF @ 35 V - 1.69W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ متوسط RFQ اليومي
20,000.000
20,000.000 وحدة المنتج القياسية
1800+
1800+ المصنعين حول العالم
15,000+
15,000+ المخزن المتاح
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